Compared with traditional slurry wire cutting, this process can greatly shorten cutting time while accurately maintaining the same excellent surface profile indicators.Relying on highly efficient and coordinated grinding, polishing and cleaning processes, the company can achieve 24‑hour ultra‑fast delivery of dicing, grinding and polishing for 6/8‑inch silicon carbide substrates, providing strong support for customers to seize market opportunities.

Details: The company has successfully developed a diamond wire rapid cutting process for silicon carbide (SiC) and gallium nitride (GaN) crystal materials. Compared with traditional slurry wire cutting, this process can greatly shorten the cutting time while accurately maintaining the same excellent surface profile indicators. Relying on highly efficient and coordinated grinding, polishing and cleaning processes, the company can achieve 24-hour ultra-fast delivery of dicing, grinding and polishing for 6/8-inch silicon carbide substrates, providing strong support for customers to seize market opportunities.