| Specification/Model | Final Single-Wafer Cleaning Machine |
| Wafer size | 4"~12"wafer process |
| Function | Wafer cleaning |
| Particle Remove Rate | ≤30ea/wafer (size≥0.3μm) |
| Metal ion Content | ≤5E10 atom/cm |
| Chamber Count | 2、4、6、8、12（Scrubbing Chamber + Spin-Drying Chamber） |
| Wafer Breakage | 1/100000 |
| Equipment Dependent Uptime (%; Average) | ≥95 |
| Mean Time Between Failure (MTBF/Hours） | ≥500 |
| UPH | ≥25pcs |
| Equipment Dimensions | 3400mm（W）*2560mm（L）*2400mm（H） |
Application Fields
Silicon, Sapphire, Silicon Carbide, Compound Semiconductors