| Specification/Model | In-line Single-wafer Cleaning Machine |
| Wafer Size | 6"~12"wafer process |
| Function | Wafer cleaning |
| Chamber Count | 2、4、6、8、12（Scrubbing Chamber + Spin-Drying Chamber） |
| Load Port | 4 |
| Clean Method | Scrubbing chamber: brush; Two-fluid: DIW, chemical solution |
| Spin Scrubber | Front / Back |
| Dry Method | High-speed spin drying |
| UPH | 8-inch / 12-inch UPH ≥ 100 pcs / 60 pcs/hr |
| Robots | 2 |
| Particle Remove Rate | No visible scratches after scrubbing. After scrubbing, no visible polishing solution residue or particles can be observed under a halogen lamp or strong light. |
| Operation Rate | >95% |
| Equipment Dimensions | 3400mm（W）*2560mm（L）*2400mm（H） |
Application Fields
Silicon, Sapphire, Silicon Carbide, Compound Semiconductors