| Specification/Model | CMP Polishing and Cleaning Integrated Machine |
| Wafer size | 8"~12"wafer process |
| Function | Wafer CMP Cleaning |
| Head Diameter （mm) | 245~345 |
| Head Zone Pressurizatior | 3Z（Optional） |
| WaxLaver Thickness | 1~5um（Controllable） |
| GBIR Profile | ≤500nm |
| ESFRQ Deterioration Amount | ≤20nm |
| Cleaning Type | CeramicPlate、Wafer Wax Remova |
| UPH | ≥50pcs |
| Equipment Dimensions | 3100mm (W) *5500mm (L) *2800mm (H) |
Application Fields
Silicon wafers, Silicon Carbide (SiC), Compound semiconductors